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| Title: | GADOLINIUM NANOWIRE GROWTH ON HIGH-INDEX SILICON SURFACES | |
| DOI No: | 10.1142/9789812701879_0020 | |
| Source: | CLUSTERS AND NANO-ASSEMBLIES (pp 175-180) | |
| Author(s): | E. MORRIS
Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA J.W. DICKINSON Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA M.L. WILLIS Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA A.A. BASKI Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA |
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| Abstract: | It is known that submonolayer coverages of rare earth metals such as Gd can form nanowires on the low-index Si(001) surface. This nanowire formation is presumably due to a close lattice match between the rare earth silicide and Si along the [110] direction, and poor match perpendicular to it. In this study, we have used scanning tunneling microscopy (STM) to examine Gd growth on the high-index Si(113) and Si(5 5 12) surfaces. As expected, Gd also forms nanowires on these surfaces for annealing temperatures above 550°C. They are similar to those found on Si(001), but have a single orientation and incorporate (001) and (111) sidewalls. The optimal template for nanowire growth appears to be the Si(113) surface with growth temperatures above 600°C. Because the lattice periodicity along the nanowire direction is identical for the (001), (113), and (5 5 12) surfaces, the appearance of such nanowires on the high-index surfaces provides further evidence for a lattice mismatch mechanism. | |
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