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| Title: | INFLUENCE OF STRUCTURAL RELAXATION ON THE OPTICAL AND ELECTRONIC PROPERTIES OF Ge and Si NANOCRYSTALS | |
| DOI No: | 10.1142/9789812701879_0040 | |
| Source: | CLUSTERS AND NANO-ASSEMBLIES (pp 349-353) | |
| Author(s): | HANS-CHRISTIAN WEISSKER
Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany JÜRGEN FURTHMÜLLER Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany FRIEDHELM BECHSTEDT Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany |
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| Abstract: | A proper account of the structural relaxation is found to be indispensable for the calculation of the electronic and optical properties of nanocrystals. While the average bond lengths are reduced as compared with the respective bulk bond lengths, the individual bond lengths show a strong variation. While they are shortened near the surface, they are enlarged at the center of the crystallite. For Ge crystallites, the radiative lifetimes are strongly reduced. Ge is predicted to be better for light-emitting applications than Si. | |
| Full Text: | View full text in PDF format (185KB) | |
| TOC: | Back to Table of Contents | |
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