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| Title: | AB-INITIO EXCITED STATES CALCULATIONS FOR SEMICONDUCTOR MATERIALS: FROM BULK TO LOW DIMENSIONAL SYSTEMS | |
| DOI No: | 10.1142/9789812701947_0001 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 3-10) | |
| Author(s): | M. PALUMMO
Dipartimento di Fisica, Universita di Roma “Tor Vergata” Via della Ricerca Scientifica I, 00133 Roma, Italy M. BRUNO Dipartimento di Fisica, Universita di Roma “Tor Vergata” Via della Ricerca Scientifica I, 00133 Roma, Italy R. DEL SOLE Dipartimento di Fisica, Universita di Roma “Tor Vergata” Via della Ricerca Scientifica I, 00133 Roma, Italy S. OSSICINI INFM-S3 nanoStructures and bioSystems at Surfaces, Dipartimento di Scienze e Metodi dell' Ingegneria, Universitaadi Modena e Reggio Emilia, Italy |
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| Abstract: | First-principles ground-state calculations on different kind of materials are currently carried out within density functional theory. On the other hand a correct description of the electronic excitations, which are at the origin of many experimental spectra, requires more refined theories. In this paper we summarize the main equations of the theoretical many-body approach used to describe electronic and optical properties of real materials. Some examples of excited state calculations in bulk and low dimensional semiconducting systems are given. | |
| Full Text: | View full text in PDF format (382KB) | |
| TOC: | Back to Table of Contents | |
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