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| Title: | GERMANIUM AND SILICON NANOCRYSTALS – EXCITATION ENERGIES AND COMPRESSION | |
| DOI No: | 10.1142/9789812701947_0009 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 62-65) | |
| Author(s): | H.-CH. WEISSKER
Laboratoire des Solides Irradiés, CNRS-CEA, École Polytechnique, F-91128 Palaiseau, France J. FURTHMÜLLER Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, D-07743 Jena, Germany L. E. RAMOS Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, D-07743 Jena, Germany F. BECHSTEDT Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, D-07743 Jena, Germany |
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| Abstract: | We calculate nanocrystal excitation energies using a ΔSCF method with occupation constraint, thus including both self-energy and Coulomb effects. We find the well-known r-1 dependence. The energies are found to follow the pressure dependence of the relevant gaps in the bulk materials; while Ge nanocrystals have a positive pressure dependence, the contrary holds for Si. For the pressure dependence of the excitation energies in SixGe1-x nanocrystals, we find the transition from Ge-like to Si-like behavior at a composition of about x=0.3. | |
| Full Text: | View full text in PDF format (202KB) | |
| TOC: | Back to Table of Contents | |
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