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| Title: | ELECTRONIC AND OPTICAL PROPERTIES OF Si-CAPPED AND Ge-CAPPED NANOCRYSTALLITES | |
| DOI No: | 10.1142/9789812701947_0010 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 66-69) | |
| Author(s): | L. E. RAMOS
Friedrich-Schiller-Universität Jena, Institut für Festkörpertheorie und –optik, Max-Wien-Platz 1, 07743 Jena, Germany J. FURTHMÜLLER Friedrich-Schiller-Universität Jena, Institut für Festkörpertheorie und –optik, Max-Wien-Platz 1, 07743 Jena, Germany F. BECHSTEDT Friedrich-Schiller-Universität Jena, Institut für Festkörpertheorie und –optik, Max-Wien-Platz 1, 07743 Jena, Germany |
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| Abstract: | We present a study of the electronic structure and optical absorption spectra of Si(Ge)-capped Ge(Si) nanocrystallites (NC's) by means of ab initio pseudopotential plane-wave calculations. In certain aspects the capped Si(Ge) NC's are similar to the analogous Si/Ge heterojunctions. A compensation effect involving the overall composition of the nanocrystallite and quantum confinement effects is predicted for the Si-capped Ge NC's. | |
| Full Text: | View full text in PDF format (225KB) | |
| TOC: | Back to Table of Contents | |
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