| Title: | TIME-RESOLVED MEASUREMENTS OF CARRIER CAPTURE IN InAs/GaAs SELF-ORGANIZED QUANTUM DOTS |
| DOI No: | 10.1142/9789812701947_0013 |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 78-82)
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| Author(s): | K. W. SUN
Department of Physics, National Dong Hwa University, Hualien, Taiwan, ROC
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| Abstract: | We have investigated the carrier capture and relaxation processes in InAs/GaAs self-assembled quantum dots (QDs) at room temperature by a photoluminescence (PL) up-conversion technique. We found that the carrier capture rate is faster than the intra-dot relaxation within the range of excitation densities that we have investigated. Under high excitation intensity, the electronic states in the dots were populated mainly by carriers directly captured from the barrier. However, at low excitation densities, the PL rise times were influenced by the carrier diffusion. |
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