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| Title: | SEGREGATION ENHANCED Ge1-xSnx NANOCRYSTAL FORMATION ON SILICON SUBSTRATE | |
| DOI No: | 10.1142/9789812701947_0014 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 83-87) | |
| Author(s): | P. I. GAIDUK
Department of Physical Electronics, Belarusian State University, 4, Fr. Scaryna Ave., 220050 Minsk, Belarus A. NYLANDSTED LARSEN Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark J. LUNDSGAARD HANSEN Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark |
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| Abstract: | Thin layers of SiGeSn alloys were deposited on (001) Si wafers by MBE followed by thermal treatment at 600-1000°C for 10-150 min in N2 or O2 atmospheres. Based on TEM and RBS investigations, we report on phase separation and Sn surface segregation after treatment in an N2 atmosphere. Formation of Ge1-xSnx crystals, however, takes place during oxidation of SiGeSn alloys. The Ge1-xSnx crystals are of nanometer size and of lens-like or sphere-like facetted shape. The formation of Ge1-xSnx crystals takes place as a result of Sn and Ge segregation at the moving SiO2/Si interface. | |
| Full Text: | View full text in PDF format (441KB) | |
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