| Title: | BURIED NANO-STRUCTURED LAYERS IN SILICON IMPLANTED WITH HELIUM AND SUBJECTED TO HIGH TEMPERATURE-PRESSURE TREATMENT |
| DOI No: | 10.1142/9789812701947_0020 |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 108-111)
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| Author(s): | A. MISIUK
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
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| Abstract: | Treatment of helium implanted silicon at up to about 920 K under enhanced hydrostatic pressure (HP, up to 1.2 GPa) of Ar results in a creation of buried nano-structured layer composed of thin walled helium-filled cavities and bubbles. The Si:He samples treated at even higher temperature indicate the presence of disturbed/dislocated buried zones. HP affects diffusivity of implanted atoms and of defects produced at implantation and promotes creation of smaller cavities and of other extended defects near the range of implanted He. |
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