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| Title: | OPTICAL PROPERTIES OF DEEP InGaN QUANTUM DOTS WITH NONEQUILIBRIUM CARRIER STATISTICS | |
| DOI No: | 10.1142/9789812701947_0023 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 120-123) | |
| Author(s): | D. S. SIZOV
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia V. S. SIZOV A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia G. A. ONUSHKIN A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia V. V. LUNDIN A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia E. E. ZAVARIN A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia A. F. TSATSUL'NIKOV A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia A. M. ARAKTCHEEVA A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia N. N. LEDENTSOV A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia |
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| Abstract: | It was shown that by using especial interruptions during growth of InGaN quantum dots (QDs) carrier localization in the QDs can be significantly enhanced. Deviation from nonequilibrium carrier distribution was revealed at the temperatures up to 600 K. In this case peak position behavior does not obey the σ2/kBT law in contrast to the structure with shallow QDs. | |
| Full Text: | View full text in PDF format (195KB) | |
| TOC: | Back to Table of Contents | |
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