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| Title: | POPULATION INVERSION OF ERBIUM ION STATES CAUSED BY ENERGY TRANSFER FROM SILICON NANOCRYSTALS | |
| DOI No: | 10.1142/9789812701947_0025 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 128-131) | |
| Author(s): | V. YU. TIMOSHENKO
Moscow State Lomonosov University, Physics Department, 119992 Moscow, Russia O. A. SHALYGINA Moscow State Lomonosov University, Physics Department, 119992 Moscow, Russia D. M. ZHIGUNOV Moscow State Lomonosov University, Physics Department, 119992 Moscow, Russia S. A. TETERUKOV Moscow State Lomonosov University, Physics Department, 119992 Moscow, Russia P. K. KASHKAROV Moscow State Lomonosov University, Physics Department, 119992 Moscow, Russia M. FUJII Kobe University, Faculty of Engineering, Department of EEE, 657-8501 Kobe, Japan S. HAYASHI Kobe University, Faculty of Engineering, Department of EEE, 657-8501 Kobe, Japan M. ZACHARIAS Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany |
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| Abstract: | Structures of silicon nanocrystals in erbium-doped silicon dioxide (nc-Si/SiO2:Er) exhibit efficient photoluminescence of Er3+ ions at 1.5 µm. The population inversion of Er3+ energy states can be achieved under strong optical pumping because of the energy transfer from the excitons in Si nanocrystals to the ions. The results obtained are discussed in view of possible applications of nc-Si/SiO2:Er structures in optical amplifiers and lasers compatible with Si-based technology. | |
| Full Text: | View full text in PDF format (993KB) | |
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