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| Title: | ELECTRONIC STRUCTURE AND PHOTOLUMINESCENCE SPECTRA OF THE Ga0.8In0.2As–GaAs HETERO-SUPERLATTICES | |
| DOI No: | 10.1142/9789812701947_0031 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 152-155) | |
| Author(s): | B. N. ZVONKOV
Institute of Microstructure Physics RAS, 603950 N. Novgorod, Russia V. I. GAVRILENKO Institute of Microstructure Physics RAS, 603950 N. Novgorod, Russia S. V. MOROZOV Institute of Microstructure Physics RAS, 603950 N. Novgorod, Russia V. K. KONONENKO Stepanov Institute of Physics NASB, 220072 Minsk, Belarus V. N. IODKO Stepanov Institute of Physics NASB, 220072 Minsk, Belarus A. V. MYDRUI Stepanov Institute of Physics NASB, 220072 Minsk, Belarus |
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| Abstract: | For the first time, superlattices in the Ga0.8In0.2As–GaAs system have been grown using Si and C for quasi-δ-doping by the metal-organic hydride epitaxy method. At low-temperature photoluminescence of the superlattices, the edge band of 1.488 eV related to recombination in the GaAs layers and a weak peak of 1.15 eV, which is associated with transitions in the Ga0.8In0.2As quantum wells are observed. In the long-wavelength part of the spectrum the intensive tunable structural band with the maximum at 0.9 eV is found as well. This band displays changes in the potential relief of the hetero-superlattice under the excitation. | |
| Full Text: | View full text in PDF format (197KB) | |
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