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| Title: | SILICON GROWTH ATOP β-FeSi2 ISLANDS ON Si(111) SUBSTRATE AND Si(111)-Cr SURFACE PHASES | |
| DOI No: | 10.1142/9789812701947_0034 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 163-166) | |
| Author(s): | N. G. GALKIN
Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia D. L. GOROSHKO Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia A. S. GOURALNIK Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia V. O. POLYARNYI Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia S. V. VAVANOVA Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia I. V. LOUCHANINOV Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia |
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| Abstract: | Silicon molecular beam epitaxy atop β-FeSi2 nanosize islands with density of 5·109 cm-2, grown on Si(111)7×7 surface and Si(111)-Cr surface phases, have been observed at 800 °C by LEED and atomic force microscopy. It was shown, that silicon thickness 0.1 µm is not enough for a full burying of iron disilicide clusters in silicon. It was revealed from in situ electrical measurements that the minimal influence on electrical properties of the silicon layer render iron disilicide clusters grown on Si(111)7×7-Cr surface phase. | |
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