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| Title: | 1.53 µm ELECTROLUMINESCENCE OF Er-DOPED NANOSIZE SILICON STRUCTURES | |
| DOI No: | 10.1142/9789812701947_0037 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 174-177) | |
| Author(s): | S. K. LAZAROUK
Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus A. V. MUDRYI Institute of Solid State and Semiconductors Physics, National Academy of Sciences of Belarus, P. Browka 17, 220072 Minsk, Belarus A. A. LESHOK Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus D. M. UNUCHAK Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus V. A. LABUNOV Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus |
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| Abstract: | Er-doped nanosize silicon structures have been fabricated by magnetron sputtering of a composite target (Al + Er2O3 + Si) and its electrochemical anodization at room temperature. The fabricated structures have been investigated with secondary ion mass spectrometry and electroluminescence measurements. The 1.53 μm electroluminescence peak at high current was attributed to Er3+ ion light emission. The high value of the pick width can be explained by the dislocation related electroluminescence observed in the investigated structures too. | |
| Full Text: | View full text in PDF format (226KB) | |
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