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| Title: | HIGH DENSITY NANOSIZE Mg2Si CLUSTERS IN SILICON MATRIX | |
| DOI No: | 10.1142/9789812701947_0040 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 187-190) | |
| Author(s): | N. G. GALKIN
Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russia K. N. GALKIN Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russia S. V. VAVANOVA Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russia |
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| Abstract: | The technology of solid-phase growth of one-layer and three-layer structures with buried magnesium silicide (Mg2Si) clusters with nanometer sizes and density of 2·109 cm-2 has been developed. According to the data of AFM and far IR spectroscopy, Mg2Si islands remain in depth of the Si layers at 650 °C. A contribution of buried magnesium silicide clusters in Si to the optical functions is observed at 0.5-2.5 eV. The huge increase of a Seebeck coefficient (in 50-180 times) for samples with buried Mg2Si clusters in comparing with one for the bare p-type silicon substrate has been observed. | |
| Full Text: | View full text in PDF format (310KB) | |
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