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| Title: | TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE FROM CdS NANOCLUSTERS FORMED IN THE MATRIX OF A LANGMUIR-BLODGETT FILM | |
| DOI No: | 10.1142/9789812701947_0042 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 195-198) | |
| Author(s): | E. A. BAGAEV
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Lavrentieva 13, 630090 Novosibirsk, Russia K. S. ZHURAVLEV Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Lavrentieva 13, 630090 Novosibirsk, Russia L. L. SVESHNIKOVA Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Lavrentieva 13, 630090 Novosibirsk, Russia |
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| Abstract: | Temperature dependence of photoluminescence(PL) from CdS nanoclusters formed in the matrix of a Langmuir-Blodgett film has been investigated. At room temperature the PL spectrum of nanoclusters in the matrix has a band with a maximum at 2.2 eV. After removing the matrix by heating in vacuum the PL spectra consist of a high energy band at 2.9 eV and lower energy band at 2.2 eV. After heating a sample in NH3 the PL spectrum consist of three bands, the intensive high energy band at 2.7 eV and two low energy bands at 2.2 eV and 1.8 eV. Temperature dependence of the maximum of the high energy band at 2.9 eV can be described by the empirical Varshni formula with the coefficient α=4·10-4 eV/K (for bulk cadmium sulfide crystal α=8·10-4 eV/K). This decrease of α is explained as a reduction of the electron-phonon coupling potential in the quantum confined nanoclusters. | |
| Full Text: | View full text in PDF format (174KB) | |
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