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| Title: | THERMOELECTRIC PROPERTIES OF Ru2Si3 NANOSIZE FILMS | |
| DOI No: | 10.1142/9789812701947_0044 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 203-207) | |
| Author(s): | A. E. KRIVOSHEEV
Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus V. L. SHAPOSHNIKOV Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus L. I. IVANENKO Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus A. B. FILONOV Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus |
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| Abstract: | Simple approach based on the effective mass theory has been developed and successfully applied to simulate thermoelectric properties of monocrystalline and grained nanocrystalline films accounting for the confinement effect and interactions between the grains. Thermoelectric efficiency was evaluated in the wide temperature range from 50 to 900 K. Quantum confinement was found to influence figure of merit (ZT) values only for the films with the thickness less than 5 nm. The highest ZT values varied from 0.63 to 0.72 depending on the film thickness as well as on the lateral size of grains. Inclusion of the grains inside the film induces a considerable increase of the bend gap and decrease of the thermal conductivity as compared to the monocrystalline film of the same thickness. | |
| Full Text: | View full text in PDF format (242KB) | |
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