| Title: | SPIN TRANSPORT IN SILICON |
| DOI No: | 10.1142/9789812701947_0058 |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 261-267)
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| Author(s): | A. FRANCINELLI
SPINTRON, Technopole Château-Gombert, BP100, 13382 Marseille, France
CRMCN UPR-CNRS 7251, Campus de Luminy, 13288 Marseille, France
V. I. SAFAROV
CRMCN UPR-CNRS 7251, Campus de Luminy, 13288 Marseille, France
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| Abstract: | We present a theoretical study of spin transport in semiconductors in a drift-diffusive regime. The electron spin motion is defined by a modified spin length, which is strongly dependent on current density. The evaluations made for the case of moderately doped n-type silicon (n~1016 cm-3) gives the diffusion length as high as several microns at room temperature. We emphasize also the difference between the electron spin polarization and current polarization. The study of spin transport through a n/n+ junction shows that in contrast to the ferromagnetic metal/normal metal junctions, the conductivity mismatch has no impact on the current polarization, but strongly affects the carrier polarization. |
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