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| Title: | MAGNETOTRANSPORT THROUGH NANOCONSTRICTION IN FERROMAGNETIC (Ga,Mn)As EPILAYERS | |
| DOI No: | 10.1142/9789812701947_0062 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 289-292) | |
| Author(s): | T. FIGIELSKI
Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland T. WOSIŃSKI Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland O. PELYA Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland J. SADOWSKI Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland A. MORAWSKI Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland A. MĄKOSA Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland W. DOBROWOLSKI Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland R. SZYMCZAK Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland J. WRÓBEL Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland |
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| Abstract: | We studied effects of domain wall pinned at nanoconstrictions created in ferromagnetic Ga0.99Mn0.01As layers on their magnetoresistance (MR). Negative MR observed at 1.5 K is likely dominated by the suppression of weak localization (WL) in a magnetic field. In constricted samples, additionally, jumps of an enhanced conductance appear, whose positions reflect the hysteresis loop of magnetization. We argue that these are manifestation of the suppression of WL due to the nucleation of a domain wall in the constriction. | |
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