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| Title: | GIANT INJECTION MAGNETORESISTANCE IN THE HETEROSTRUCTURE GaAs/GRANULAR FILM WITH COBALT NANOPARTICLES | |
| DOI No: | 10.1142/9789812701947_0063 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 293-296) | |
| Author(s): | L. V. LUTSEV
Research Institute ‘Ferrite-Domen’, 8 Chernigovskaya Street, 196084 St.-Petersburg, Russia A. I. STOGNIJ Minsk Research Institute of Radiomaterials, 86 Kizhevatova Street, 220024 Minsk, Belarus N. N. NOVITSKII Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, 17 P.Browka Str., 220072 Minsk, Belarus |
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| Abstract: | We have studied the electron transport and have observed a new phenomenon, the positive injection magnetoresistance in heterostructures GaAs/granular film where the granular film is either SiO2 with Co nanoparticles or TiO2 with Co island layers. A theoretical model of the effect is based on surmounting of injecting electrons on potential barriers in the spin-polarized accumulation electron layer, which is formed in GaAs near the interface. | |
| Full Text: | View full text in PDF format (207KB) | |
| TOC: | Back to Table of Contents | |
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