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| Title: | IN SITU DIFFERENTIAL REFLECTANCE SPECTROSCOPY STUDY OF Fe/Si(111) AND Fe/Si(100) INTERFACES | |
| DOI No: | 10.1142/9789812701947_0070 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES (pp 319-322) | |
| Author(s): | S. A. DOTSENKO
Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia A. S. GOURALNIK Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia L. V. KOVAL' Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041, Vladivostok, Russia |
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| Abstract: | The method of differential reflection spectroscopy (DRS) has been applied to study thin iron films during their growth on Si(111) or Si(100) surfaces at room temperature (RT). Some details on the dynamic standard method in DRS method are given. A dependence of dielectric function of the films on the deposit amount is presented. The difference is shown between the iron films grown on Si(100) and Si(111). | |
| Full Text: | View full text in PDF format (828KB) | |
| TOC: | Back to Table of Contents | |
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