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HIGH PERFORMANCE DEVICES Proceedings of the 2004 IEEE Lester Eastman Conference Rensselaer Polytechnic Institute, 4 – 6 August 2004 CONTENTS FRONT MATTER v VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ J.W. LAI, W. HAFEZ and M. FENG 1 NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTs DMITRY VEKSLER, MICHAEL S. SHUR, V.E. HOUTSMA, N.G. WEIMANN and Y.K. CHEN 8 TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR QINGMIN LIU, SURAJIT SUTAR and ALAN SEABAUGH 16 BENCHMARK RESULTS FOR HIGH-SPEED 4-BIT ACCUMULATORS IMPLEMENTED IN INDIUM PHOSPHIDE DHBT TECHNOLOGY STEVEN EUGENE TURNER and DAVID E. KOTECKI 22 ATOMICALLY FLAT III-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXY ANIKA KUMAR, SUJATHA SRIDARAN and P. S. DUTTA 28 NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATES ROBINSON PINO, YOUNGOK KO and PARTHA S. DUTTA 34 NOISE AND THZ RECTIFICATION CHARACTERISTICS OF ZERO-BIAS QUANTUM TUNNELING SB-HETEROSTRUCTURE DIODES ARTTU LUUKANEN, ERICH N. GROSSMAN, HARRIS P. MOYER and JOEL N. SCHULMAN 40 TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON R. T. TROEGER, T. N. ADAM, S. K. RAY, P.-C. LV, S. KIM and J. KOLODZEY 46 TWO-DIMENSIONAL ANALYTICAL MODELING AND SIMULATION OF RETROGRADE DOPED HMG MOSFET R.S GUPTA, KIRTI GOEL, MRIDULA GUPTA and MANOJ SAXENA 52 ELECTRICAL EFFECTS OF DNA MOLECULES ON SILICON FIELD EFFECT TRANSISTOR G. XUAN, J. KOLODZEY, V. KAPOOR and G. GONYE 60 ANALYSIS OF OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR APPLICATION IN GHz FREQUENCY RANGE A. GHORI and P. GHOSH 66 LIFETIME OF NONEQUILIBRIUM CARRIERS IN AlGaN EPILAYERS WITH HIGH Al MOLAR FRACTION J. MICKEVICIUS, R. ALEKSIEJUNAS, M. S. SHUR, J. P. ZHANG, Q. FAREED, R. GASKA and G. TAMULAITIS 72 NOISE CHARACTERISTICS OF 340 nm AND 280 nm GaN-BASED LIGHT EMITTING DIODES SHAYLA SAWYER, SERGEY L. RUMYANTSEV, NEZIH PALA, MICHAEL S. SHUR, YURIY BILENKO, REMIS GASKA, PAVEL V. KOSTERIN and BRIAN M. SALZBERG 78 JUNCTION-TEMPERATURE MEASUREMENTS IN GaN UV LIGHT-EMITTING DIODES USING THE DIODE FORWARD VOLTAGE Y. XI and E. F. SCHUBERT 84 High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process WOJCIECH P. GIZIEWICZ, CLIFTON G. FONSTAD, Jr. and SHEILA PRASAD 90 SELF-GUIDING IN LOW-INDEX-CONTRAST PLANAR PHOTONIC CRYSTALS CAIHUA CHEN, ZHAOLIN LU, SHOUYUAN SHI and DENNIS W. PRATHER 96 OMNI-DIRECTIONAL REFLECTOR USING A LOW REFRACTIVE INDEX MATERIAL J.-Q. XI, MANAS OJHA, WOOJIN CHO, TH. GESSMANN, E. F. SCHUBERT, J. L. PLAWSKY and W. N. GILL 102 MBE-Grown AIGaN/GaN HEMTs on SiC SIDDHARTH RAJAN, ARPAN CHAKRABORTY, UMESH K. MISHRA, CHRISTIANE POBLENZ, PATRICK WALTEREIT and JAMES S. SPECK 108 STABLE HIGH POWER GaN-ON-GaN HEMT K.K. CHU, P.C. CHAO and J.A. WINDYKA 114 THICK GaN LAYER GROWN BY Ga VAPOR TRANSPORT TECHNIQUE HUAQIANG WU, PHANIKUMAR KONKAPAKA, YURI MAKAROV and MICHAEL G. SPENCER 121 DEPENDENCE OF RF PERFORMANCE OF GaN/AlGaN HEMTS UPON AlGaN BARRIER LAYER VARIATION ELIAS FARACLAS, RICHARD T. WEBSTER, GEORGE BRANDES and A. F. M. ANWAR 126 SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES D. BUTTARI, A. CHINI, A. CHAKRABORTY, L. MCCARTHY, H. XING, T. PALACIOS, L. SHEN, S. KELLER and U. K. MISHRA 132 LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION S.A. VITUSEVICH, S.V. DANYLYUK, N. KLEIN, M.V. PETRYCHUK, A.E. BELYAEV, A. VERTIATCHIKH and L.F. EASTMAN 138 TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING HYEONGNAM KIM, JAESUN LEE and WU LU 145 PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE NIKOLAI B. GOREV, INNA F. KODZHESPIROVA, EVGENY N. PRIVALOV, NINA KHUCHUA, LEVAN KHVEDELIDZE and MICHAEL S. SHUR 151 UNSTRAINED InAlN/GaN HEMT STRUCTURE M. NEUBURGER, T. ZIMMERMANN, E. KOHN, A. DADGAR, F. SCHULZE, A. KRTSCHIL, M. GÜNTHER, H. WITTE, J. BLÄSING, A. KROST, I. DAUMILLER and M. KUNZE 161 GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al2O3 AS GATE DIELECTRIC AND SURFACE PASSIVATION P.D. Ye, B. Yang, K.K. Ng, J. Bude, G.D. Wilk, S. Halder and J.C.M. Hwang 167 DEPENDENCE OF ELECTRON MOBILITY ON EPI CHANNEL DOPING IN GaN MOSFETS J. RUAN, K. MATOCHA, W. HUANG and T.P. CHOW 173 FABRICATION OF SELF-ALIGNED T-GATE AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS JAESUN LEE, DONGMIN LIU, HYEONGNAM KIM, MICHAEL L. SCHUETTE, WU LU, JEFFREY S. FLYNN and GEORGE R. BRANDES 181 A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE HONGTAO XU, CHRISTOPHER SANABRIA, ALESSANDRO CHINI, YUN WEI, STEN HEIKMAN, STACIA KELLER, UMESH K. MISHRA and ROBERT A. YORK 186 NOISE CHARACTERISTICS OF FIELD-PLATED GAN HEMTS Y.-F. WU, M. MOORE, T. WISLEDER, P.M. CHAVARKAR, P. PARIKH and A. SAXLER 192 TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS HUILI G. XING and UMESH K. MISHRA 195 ANALYSIS OF HIGH DC CURRENT GAIN STRUCTURES FOR GaN/InGaN/GaN HBTs JAMES C. LI, DAVID M. KEOGH, SOUROBH RAYCHAUDHURI, ADAM CONWAY, DONGJIANG QIAO and PETER M. ASBECK 201 ANALYSIS OF GaN HBT STRUCTURES FOR HIGH POWER, HIGH EFFICIENCY MICROWAVE AMPLIFIERS D.M. KEOGH, J.C. LI, A.M. CONWAY, D. QIAO, S. RAYCHAUDHURI, P.M. ASBECK, R.D. DUPUIS and M. FENG 207 LEAKY SURFACE ACOUSTIC WAVES IN SINGLE-CRYSTAL AlN SUBSTRATE GANG BU, DAUMANTAS CIPLYS, MICHAEL S. SHUR, LEO J. SCHOWALTER, SANDRA B. SCHUJMAN and REMIS GASKA 213 HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE SHOUXUAN XIE, VAMSI PAIDI, STEN HEIKMAN, LIKUN SHEN, ALESSANDRO CHINI, UMESH K. MISHRA, MARK J. W. RODWELL and STEPHEN I. LONG 223 SPICE MODEL OF AlGaN/GaN HEMTs AND SIMULATION OF VCO AND POWER AMPLIFIER SYED S. ISLAM and A.F.M. ANWAR 229 HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES MRINAL K. DAS, JOSEPH J. SUMAKERIS, BRETT A. HULL, JIM RICHMOND, SUMI KRISHNASWAMI and ADRIAN R. POWELL 236 DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS Lin Zhu, Peter Losee and T. Paul Chow 241 HIGH-VOLTAGE DIAMOND SCHOTTKY RECTIFIERS W. HUANG, T.P. CHOW, J. YANG and J.E. BUTLER 248 2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS SEI-HYUNG RYU, SUMI KRISHNASWAMI, MRINAL DAS, JAMES RICHMOND, ANANT AGARWAL, JOHN PALMOUR and JAMES SCOFIELD 255 SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC MESFETs HO-YOUNG CHA, Y. C. CHOI, LESTER F. EASTMAN and MICHAEL G. SPENCER 260 EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICS SANKHA S. MUKHERJEE and SYED S. ISLAM 266 ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFET R.S GUPTA, SANDEEP KUMAR AGGARWAL, RITESH GUPTA, MRIDULA GUPTA and SUBHASIS HALDAR 273 ION IMPLANTED SiC STATIC INDUCTION TRANSISTOR WITH 107 W OUTPUT POWER AND 59% POWER ADDED EFFICIENCY UNDER CW OPERATION AT 750 MHZ G.C. DE SALVO, P.M. ESKER, T.A. FLINT, J.A. OSTOP, E.J. STEWART, T.J. KNIGHT, K.J. PETROSKY, S.D. VAN CAMPEN, R.C. CLARKE and G.M. BATES 282 INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-SiC SIT YOUNG CHUL CHOI, HO-YOUNG CHA, LESTER F. EASTMAN and MICHAEL G. SPENCER 285 BACK MATTER 291 Back

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