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| Title: | VACANCY AND VACANCY-OXYGEN CLUSTERS IN EPI-Si p+-n DIODES IRRADIATED WITH MeV ELECTRONS AT ELEVATED TEMPERATURES | |
| DOI No: | 10.1142/9789814280365_0150 | |
| Source: | PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES Reviews and Short Notes (pp 632-635) |
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| Author(s): | S. B. LASTOVSKII
Scientific-Practical Materials Research Centre NASB, P. Browka 19, Minsk, Belarus Yu. V. BOGATYREV Scientific-Practical Materials Research Centre NASB, P. Browka 19, Minsk, Belarus V. P. MARKEVICH Scientific-Practical Materials Research Centre NASB, P. Browka 19, Minsk, Belarus L. I. MURIN Scientific-Practical Materials Research Centre NASB, P. Browka 19, Minsk, Belarus F. P. KORSHUNOV Scientific-Practical Materials Research Centre NASB, P. Browka 19, Minsk, Belarus |
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| Abstract: | Vacancy-related complexes which were generated in silicon p+-n diodes by irradiation with 6 MeV electrons in the temperature range of 350-800 K have been studied by means of deep level transient spectroscopy. Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. Electronic parameters of defects incorporating up to three vacancies and an oxygen atom have been determined. Total introduction rate of radiation-induced defects increased about twice upon raising the irradiation temperature from 350 to 675 K. | |
| Full Text: | View full text in PDF format (159KB) | |
| TOC: | Back to Table of Contents | |
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